PART |
Description |
Maker |
2SK2415-Z-E1 2SK2415-Z-E1JM 2SK2415-Z-E2 2SK2415-Z |
Low withstand voltage Nch MOS FET
|
NEC
|
UPA1750 UPA1750G |
Pch low withstand voltage power MOSFET 8-pin SOP 20V
|
NEC
|
UM5K1N UM5K1N06 |
2.5V Drive Nch Nch MOS FET
|
Rohm
|
3SK324UG 3SK324 |
Si Nch Dual Gate MOS FET UHF RF LOW NOISE Amplifier
|
Renesas Electronics Corporation
|
UPA1855 UPA1855GR-9JG |
Nch enhancement type MOS FET MOS FIELD EFFECT TRANSISTOR
|
NEC
|
NP22N055IHE NP22N055HHE NP22N055HHE-AZ NP22N055 NP |
Nch MOS FET for High-speed switching MOS FIELD EFFECT TRANSISTOR 22 A, 55 V, 0.039 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 MP-3, 3 PIN
|
http:// NEC[NEC] Cypress Semiconductor, Corp.
|
SZESD7102BT1G |
null8-bit Withstand Voltage Microcontroller
|
ON Semiconductor
|
G5NB-1ADC12 G5NB-1A-DC5 |
A Slim Compact Relay with 3 A Switching Capability and 10-kV Impulse Withstand Voltage
|
Omron Electronics LLC
|
BD63715AEFV-E2 |
36VHigh-performance, High-reliability Withstand Voltage Stepping Motor Driver
|
ROHM
|
APT1001RBLC APT1001RSLC APT1001 |
POWER MOS VI 1000V 11A 1.000 Ohm Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology] Advanced Power Technology Ltd.
|
APT10050LLC APT10050B2LC |
POWER MOS VI 1000V 21A 0.500 Ohm Power MOS VITM is a new generation of low gate charge, high voltage
|
Advanced Power Technology Ltd.
|
APT5018BFLL APT5018SFLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS 电源MOS 7TM是一个低损耗,高电压,N沟道增强模式的新一代功率MOSFET Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS POWER MOS 7 500V 27A 0.180 Ohm
|
Advanced Power Technology, Ltd.
|